creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test v rrm 35 45 50 60 90 100 150 v v rms 24 31 35 42 63 70 105 v v dc 35 45 50 60 90 100 150 v i f(av) a dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d131012 version: i13 mbrf835ct thru mbrf8150ct taiwan semiconductor dual common cathode schottk y rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec ito-220ab mechanical data case: ito-220ab polarity: as marked mounting torque: 5 in-lbs maximum weight: 1.7 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol mbrf 835 ct mbrf 845 ct mbrf 850 ct mbrf 860 ct mbrf 890 ct maximum dc blocking voltage maximum average forward rectified current 8 mbrf 8100 ct mbrf 8150 ct unit maximum repetitive peak reverse voltage maximum rms voltage v maximum instantaneous forward voltage (note 1) i f = 4 a v f peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a - 55 to +150 ma 15 10 5 voltage rate of change (rated v r ) 10000 maximum reverse current @ rated vr t j =25 t j =125 i r 0.1 note 1: pulse test with pw=300 s, 1% duty cycle 0.55 0.70 0.85 0.95 typical thermal resistance 6 operating junction temperature range - 55 to +150 storage temperature range
part no. part no. mbrf860ct mbrf860ct (ta=25 unless otherwise noted) document number: ds_d131012 version: i13 ordering information suffix "g" ito-220ab mbrf835ct thru mbrf8150ct taiwan semiconductor packing code green compound code package note 1: "xx" defines voltage from 35v (mbrf835ct) to 150v (mbrf8150ct) mbrf8xxct (note 1) c0 example 50 / tube packing ratings and characteristics curves mbrf860ct c0 c0 mbrf860ct c0g c0 g preferred p/n packing code green compound code green compound description 0 2 4 6 8 10 50 60 70 80 90 100 110 120 130 140 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductiveload with heatsink 0 25 50 75 100 125 150 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics per leg tj=75 tj=125 tj=25 0.1 1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 instantaneous forward current (a) forward voltage (v) fig. 3 typical forward characteristics per leg pulse width=300 s 1% duty cycle mbrf8150ct MBRF890CT - 8100ct mbrf850ct - 860ct mbrf835ct - 845ct
min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.80 - 0.071 o 2.41 2.67 0.095 0.105 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d131012 version: i13 marking diagram mbrf835ct thru mbrf8150ct taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance per leg f=1.0mhz vsig=50mvp-p mbrf8150ct mbrf835ct - 8100ct 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance per leg
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